STSetch2 Email Log

PhD Defense Announcement: Joey Doll

2012-02-13T12:58:00.001-08:00

University PhD Dissertation Defense

MEMS force probes for mechanobiology at the microsecond scale

Joey Doll

Department of Mechanical Engineering

Advisor: Prof. Beth L. Pruitt

Wednesday, March 7, 2012

9:00 am (refreshments at 8:45 am)

Paul G. Allen Auditorium (CIS-X 101)

http://cis.stanford.edu/directions/

Life is built upon mechanical forces, which play a central role in everything from cell division to embryonic development. Rather than acting as passive mechanical elements, cells and molecules sense and actively respond to mechanical loads. One example of cellular force sensing is mechanotransduction, the conversion of mechanical energy into an electrical signal, which underlies our senses of hearing, touch and balance. For example, the cochlear hair cells in your inner ear are exquisitely sensitive and fast, capable of sensing piconewton-scale forces at the microsecond-time scale. But in order to understand such fast mechanotransduction processes we must first be able to apply and measure small, fast forces. A variety of instruments have been developed for the precise measurement of biological forces and displacements in the past 25 years. The most commonly used techniques are atomic force microscopy, magnetic tweezers, and optical tweezers. Each provides a tradeoff in force, displacement and time resolution, but none of them are capable of applying and detecting forces fast enough for the study of cochlear hair cells.

In order to address this technological gap we have developed microfabricated force probes for the application and measurement of forces at the piconewton- and microsecond-scale. In order to simultaneously achieve a high resonant frequency (10-200 kHz in water), low stiffness (0.3-30 mN/m) and low minimum detectable force (10-100 pN), the probes are roughly 300 nm thick, 1 micron wide and 30-200 microns long. Force applied to the cantilever tip is transduced into a voltage by a piezoresistive silicon strain gauge that is embedded in the beam. Actuation is accomplished through a piezoelectric aluminum nitride film or a resistively heated aluminum film to enable high-speed operation without spurious resonant modes. The probes are mass produced on silicon wafers using conventional batch fabrication techniques, and their dimensions are individually adjusted lithographically to accommodate a wide range of desired force and time resolutions. Optics are not required for sensing or actuation so the probes can be integrated with any standard upright up inverted microscope.

This talk will begin with a discussion of the mechanical, electrical and thermal design of the force probes. Numerical design optimization is utilized to satisfy the numerous design and performance constraints. Next, I will present the seven- and nine-mask fabrication processes used to manufacture the thermally and piezoelectrically actuated probes. The sensing and actuation performance of the probes will be individually addressed before discussing their integration, particularly crosstalk compensation. I will conclude by presenting preliminary data on the measurement of mammalian hair cell kinetics using the piezoelectrically actuated probes.

Stanford University Photonics Retreat - early registration closes today

2012-02-13T00:36:00.001-08:00

Students and postdocs: register today for SUPR!

(and save $20)

We've got a great lineup of speakers and an exciting weekend planned

All grad students (including 1st/2nd years) & post-docs are welcome!

Stanford University Photonics Retreat 2012

April 13-15, 2012

Asilomar Conference Grounds, Pacific Grove, CA

Subsidized Cost for Stanford Students & Post-docs:

Early Registration (by Feb. 13): $50 (OSA/SPIE Member) or $150 (non-member)

Regular Registration (by Mar. 12): $70 (OSA/SPIE Member) or $175 (non-member)

Registration includes two nights shared lodging at Asilomar, all meals and transportation.

Renew/Join OSA or SPIE for only $20/$30 to get the reduced rate!

More details available at:

http://supr.stanford.edu

Interested faculty please contact us directly: stanford-photons@stanford.edu

___________

What is SUPR?

- SUPR is the Stanford University Photonics Retreat, a student-organized conference for Stanford's optics and photonics community (students, faculty and invited guests & alumni) that is held each year at an off-campus location. SUPR is generously supported by many sponsors to keep costs minimal and low for students.

- SUPR 2012 will be our fourth retreat, and is planned by the Stanford Optical Society (a Student Chapter of OSA/SPIE) and the Stanford Photonics Research Center (SPRC). It is our student chapter's marquee event. We believe it is essential to have a dedicated weekend for the larger optics and photonics community to meet off-campus, share their research, network and build fruitful collaborations.

-------

SUPR Student Organizing Committee: Aaswath Raman, Ross Audet, Sam Bockenhauer, Kristen Boucher, Robert Chen, Lana Lau, Matthew Lew, Charlie Rudy, Darin Sleiter and Alok Vasudev.

SNF logo contest: five days to go!

2012-02-12T18:55:00.000-08:00

Dear SNF Labmembers,

Just a reminder that the logo contest closes at 5:00 pm this Friday -- 5
days to go.

I've received several submissions, but it's still not a high percentage
of the more than 200-strong user community.

Thanks,
Roger Howe

On 2/3/12 8:27 AM, Roger T. Howe wrote:
> Dear SNF Labmembers,
>
> As we all eagerly await the re-opening of the SNF and the
> installation, permitting, and release this spring of the three new
> PlasmaTherm dry etchers, the new Oxford III-V etcher, the 2nd Centura
> epi chamber, our 2nd Fiji PE-ALD, and our 2nd Savannah (to be operated
> in a glovebox for molecular vapor deposition), I'd like to invite you
> to participate in a competition for a new logo for the SNF. Our
> current logo (see the website to check it out) dates to the beginning
> of NNUN in the mid-1990s. All with artistic talent, or without it for
> that matter, are invited to design a new logo over the next two
> weeks. This email is going to the labmember community, but we'd like
> to open it to your friends, as well.
>
> The deadline is 5:00 pm, Pacific Time, Friday, February 17. Please
> send it in .gif, .jpg, or .pdf format. A committee consisting of the
> senior SNF staff and I will select the winner. The prize: a Kindle
> Fire.
>
> Thanks,
> Roger Howe
>
>
>

[Reminder] MSE PhD Oral Examination----Hai Lin, Thur. Feb 16, 10am, CIS-X Aud.

2012-02-12T17:02:00.001-08:00

Title: Growth and Characterization of GeSn and SiGeSn Alloys for Optical Interconnects

Speaker: Hai Lin, Department of Materials Science and Engineering
Advisor: Prof. James. Harris

Date: Thursday, February 16th 2012, 10AM (Refreshments at 9:45AM)
Location: CIS-X 101 Allen Auditorium (http://cis.stanford.edu/directions/)

Abstract:
As the device size scales down, one of the major limitations in today's silicon (Si) integrated circuits (IC) comes from the electrical interconnects. In order to increase the interconnect density and decrease the interconnect energy, optical interconnects to chip or even on chip have been widely investigated. Devices for optical interconnects, such as modulator and detector, have been achieved using Si and germanium (Ge). A major issue now is the lack of a Si compatible light source. Because Si has very poor light emitting efficiency, current research focuses on Ge based semiconductors. Two approaches have been considered to modify the band structure of Ge and make it a direct band gap material: applying tensile strain and alloying with Tin (Sn). In previous research, we have demonstrated the photoluminescence (PL) enhancement of Ge by tensile strain. This presentation will mainly focus on GeSn and SiGeSn alloys.

GeSn alloys were grown by molecular beam epitaxy (MBE) machines at low growth temperature (150-200⁰C) on InGaAs buffer layers. GeSn alloys with up to 10.5% Sn have been demonstrated with high crystal quality. The GeSn layers were characterized by atomic force microscopy (AFM) and transmission electron microscopy (TEM). The composition and strain were studied by X-ray diffraction and X-ray photoelectron spectroscopy. The optical properties of GeSn alloys were measured by photoreflectance (PR) and PL. PR measured at room temperature determined the direct bandgap energies from the maxima of the ligh- and heavy-hole bands to the bottom of Γ valley. The calculated energy bowing parameter for GeSn is 2.42±0.04eV. The effect of biaxial strain on the direct band gap is described by deformation potentials. With these basic parameters, we can plot the band gap change of GeSn alloys with respect to Sn concentration and strain, which is very useful for design of future optoelectronic devices based on GeSn alloys. In addition, from low-temperature PL measurement, we showed that adding 6~7% Sn can change unstrained GeSn alloys to direct band gap materials.

The second part of the presentation will discuss the growth of SiGeSn and GeSn/SiGeSn double heterostructure. SiGeSn alloys have been proposed to be the barrier layers for GeSn quantum wells. Because ternary alloys, such as SiGeSn, have decoupled bandgap energy and lattice constant, the quantum well design has the freedom to choose strain state while keeping a larger band gap barrier. Good crystal quality of SiGeSn alloys have been grown by MBE and annealed by RTA at 500⁰C for 2mins in forming gas ambient. The direct bandgap energies of the alloys were measured by PR at room temperature, and the relationship between composition and direct band gap were discussed. Finally, PL of GeSn/SiGeSn double heterostructure were demonstrated.

Through these investigations, we obtained the basic material properties of GeSn and SiGeSn, which are valuable in design of group IV light source for on chip optical interconnects.

Hai Lin
Graduate Student
Department of Materials Science and Engineering
Stanford University

[Reminder] MSE PhD Dissertation Defense: Sangwon Lee (Tomorrow, 10am)

2012-02-12T08:38:00.000-08:00

Department of Materials Science & Engineering
University PhD Dissertation Defense

Graphene: Synthesis, Structure & Properties

Sangwon Lee
Advisor: Prof. Alberto Salleo

Date: Monday, February 13th, 2012
Time: 10 am (Refreshments served at 9:45 am)

Location: Jerry Yang and Akiko Yamazaki Environment and Energy Building (Y2E2)
Conference room # 299 (Bechtel conference room)
(http://campus-map.stanford.edu/index.cfm?ID=04-070)

Abstract
The discovery of free-standing graphene in 2004 has attracted wide attention in both scientific communities and industries because of its unusual electronic structure and properties. Due to the possible applications of graphene, many attempts to produce high-quality wafer-scale graphene films have been actively tried in the materials science and other scientific communities. Thermal decomposition of silicon carbide (SiC) is considered as one of the most promising routes toward the synthesis of well-controlled and characterized graphene films.

Since the argon (Ar) atmosphere produced higher quality graphene films on SiC than in vacuum, the inert-gas mediated thermal decomposition of SiC is regarded so far as the most effective method for the controlled epitaxial graphene (EG) growth. Most studies and progresses have been demonstrated with the Si-face of basal plane oriented SiC substrates because of its slower reaction kinetics, which results from higher surface energy than the C-face. Nevertheless, there is significant interest in obtaining few-layer, smooth EG on the C-face of SiC due to its superior electrical properties as compared to EG on the Si-face. The first part of the presentation will focus on the structural properties of EG layers grown on the C-face of 4H-SiC in vacuum or Ar environments by X-ray diffraction using synchrotron radiation. The qualities and characteristics of layers will be also correlated with carrier mobilities from Hall measurements.

The high temperatures required in this method (~ 1400°C) are not compatible with large-scale device integration where different materials must be deposited and patterned prior to the formation of the semiconductor layers and limit the synthesis to single-crystal SiC substrates. In the second part of the presentation, an alternative low-temperature, spatially controlled and scalable epitaxial graphene synthesis technique based on laser-induced surface decomposition of SiC will be proposed. This technique is compatible and amenable to large-scale device integration. Furthermore, laser synthesis of graphene offers the advantage of combining synthesis and patterning in one step as the process can be designed to form graphene devices in predetermined locations on the substrate. Our results in this research show that epitaxial graphene (EG) forms on SiC as a result of laser irradiation. Various characterization techniques such as RHEED, synchrotron-based X-ray diffraction, Raman, TEM and STM were used to confirm the graphitization of SiC and to measure the properties of graphene films.

Renovation Update/Tentative Lab Opening Date - Wed!

2012-02-10T17:01:00.001-08:00

Dear Labmembers --

Thanks for your patience. Things are really finally coming together. The contractors are done with the lab. However, work on some facilities continues. The Stanford Building services group is now tidying up loose ends. Today, the process cooling water, compressed air, and the scrubbers were down. Scrubbers will remain down through probably through Monday, which means no chemicals or other hazardous materials can be used. Monday, we will lose nitrogen for the building. This should be the last of the facilities shutdowns. Over the past 10 days, in between shutdowns, staff has been cautiously turning on tools and making repairs to those that didn't do well with the long shutdown. Staff have also been busy unpacking stored items, wiping every surface down, and preparing space for the new etchers due to arrive shortly. (MANY thanks to those labmembers who came in to help wipe, scrape, haul, and label!) However, because of the facilities shutdowns, there has been little opportunity to test the equipment so tool status is still largely uncertain.Tuesday, we hope we will be fully back online with facilities to continue with decontamination and systems testing.

We're tentatively hoping to reopen the lab on Wednesday morning, at 10 am. This will allow the staff to meet in the morning to assess the lab and update Coral. Please make sure to check Coral for details on tool status as we do expect some critical tools to remain down and other tools to be functionally tested, but not process-qualified. This time and date may be subject to change -- we will let you know as soon as we do of any definite changes to the plan.

James reports the Raith system has been fully tested and should be ready to use Tuesday. Please check Coral for status and check with James about using the system -- please be aware that support systems (coaters, for example) may not be available then.

Lastly, the next phase of the renovation is beginning: the nSiL (Nano Structure Interfaces Lab). The corridor at the end of the hall is blocked off as a construction zone. Make sure to respect the barriers and signs.

Your SNF Staff

--  Mary X. Tang, Ph.D. Stanford Nanofabrication Facility Paul G. Allen Room 136, Mail Code 4070 Stanford, CA  94305 (650)723-9980 mtang@stanford.edu http://snf.stanford.edu

Cu plating

2012-02-10T14:03:00.001-08:00

Hi all,

Does anyone have experience with Cu plating? Your advice would be much appreciated.

Thanks,
Alex

Alexander Hsing
Ph.D. Candidate
Mobile: 310.560.6895
Department of Materials Science and Engineering
496 Lomita Mall, Durand Bldg., Rm. 111A
Stanford University
Stanford, CA 94305

Seminar: Adam de la Zerda, "Imaging Cancer Biomolecules using Light, Sound and Bio-orthogonal Chemistry", Monday Feb 14 4PM Allen 101X

2012-02-10T10:37:00.001-08:00

Hi all,

Please plan on attending this interesting seminar by Adam de la Zerda on dynamics of cancer-specific biomolecules using molecular imaging technologies.

Who: Adam de la Zerda, PhD

When: Tuesday, Feb 14 4:00-5:00 pm

Where: Allen 101X Auditorium

Title: Imaging Cancer Biomolecules using Light, Sound and Bio-orthogonal Chemistry

Abstract:

Many cancer-specific biomolecules are dynamic in space, time and local environments. Hence,

in order to truly understand their role in cancer progression, it is important to visualize them in

living subjects – their most natural environment. In this talk, we introduce a number of new

molecular imaging technologies as well as new chemistry that allows interrogation of many

cancer biomarkers for the first time. We first introduce photoacoustic molecular imaging, a

technology where short light pulses are converted into ultrasound waves by a contrast molecule.

By measuring the ultrasound waves emanating from the body, one can create a detailed 3D

image of contrast molecules that target cancer. Second we will introduce our current work on a

novel chemistry approach for targeting cancer-specific glycans (sugars). Altered glycan patterns

are a hallmark of cancer but are very difficult to image. We will present a novel chemistry

method for labeling cell-surface glycans based on specific chemical reactions that are orthogonal

to all other biological processes, hence, allowing very specific and sensitive detection.

Profile:

Dr. Adam de la Zerda will be joining the faculty of Structural Biology at Stanford Medical School in September

2012 as an Assistant Professor. In 2011 Dr. de la Zerda finished his PhD in Electrical Engineering at Stanford

University, and is currently a postdoctoral fellow in Chemistry at UC Berkeley. He is working on the development

of new molecular imaging technologies to visualize and interrogate various biomolecules in cancer. Dr. de la Zerda

has received numerous awards for his research including the Damon Runyon Cancer Research Foundation

Fellowship (2011), Era of Hope Distinguished Predoctoral Award (2011), Best Poster Presentation at SPIE

Photonics West (2009), the Young Investigator Award at the World Molecular Imaging Congress (2008), the

Department of Defense Breast Cancer Research Program Predoctoral Award (2008), and the Bio-X Graduate

Student Fellowship (2008). He published over 13 papers in leading journals including Nature Nanotechnology,

Nature Medicine, Nano Letters, and PNAS, some of which received significant press coverage from Forbes

Magazine, US News and The Washington Post. He holds a number of patents and is the co-founder of a medical

imaging device company, OcuBell Inc. He studied Computer Engineering at the Technion – Israel Institute of

Technology where he graduated with a B.Sc. Summa Cum Laude .

Hope to see you all there.

Jose

Jose Padovani

Graduate Student

Electrical Engineering Department

Stanford University

(650) 796-1971

[Reminder] TODAY- EE Ph.D. Oral Examination: Stephanie Claussen, Feb. 10 at 1:00 pm

2012-02-10T09:28:00.001-08:00

Stanford University Oral Examination – Department of Electrical Engineering

Speaker: Stephanie Claussen
Advisor: Professor David A. B. Miller
Date: Friday, February 10, 2012
Time: 1:00 pm (refreshments at 12:45 pm)
Location: Allen-X Auditorium (formerly CIS-X Auditorium) - Room 101

Title:
High-performance Ge/SiGe quantum well waveguide modulators for optical interconnect systems

Abstract:
Electrical interconnects are rapidly nearing fundamental density-related and energy consumption limitations. Scaling a wire down in size does not allow it to carry more information, and the associated power consumption is becoming environmentally-significant. Optical interconnects provide a promising solution, but require CMOS-compatible, high-speed, low-energy optical components in order to be feasible. Ge/SiGe quantum wells (QWs) exhibit the quantum-confined Stark effect, a strong electroabsorption mechanism that enables compact optical modulators for use in future optical interconnect systems.

To design and optimize high-performance modulators, we have experimentally investigated the ultrafast carrier dynamics and transport properties of Ge/SiGe QWs. We discuss the implications of these measured femtosecond carrier lifetimes on the ultimate performance limitations of these devices.

We will then present recent progress toward achieving Ge/SiGe QW modulators integrated with low-loss silicon-on-insulator (SOI) waveguides. Waveguide modulators enable easy integration with other interconnect components and potentially high modulation contrast ratios. However, integration with SOI waveguides requires controllable selective-area epitaxial growth of the QW material. In this talk, we show demonstrations of high-quality selective-area growth of Ge and SiGe and discuss our advancements in the fabrication of Ge/SiGe QW waveguide modulators.

Soft cantilevers and air-water interfaces

2012-02-08T19:28:00.001-08:00

Hi Labmembers -
I have some soft silicon cantilevers (e.g. 1 mN/m) that tend to break
when removed from water. They can enter liquid without breaking, but
upon exiting they get stuck at the air-water interface and either
stick to the die or just snap off. Does anyone have any tips for
safely removing soft cantilevers from liquid? Some of the devices are
bare silicon while others are coated with parylene, and I've tested
lower surface tension liquids (e.g. ethanol) and oxygen plasma to
render the surface hydrophilic without much success. This is after the
devices have exited the SNF and CPD isn't an option. Any
suggestions/thoughts you have would be much appreciated.

Thanks!
Joey

Re: Gryphon Sputter Retirement

2012-02-08T16:51:00.001-08:00

Dear Ed,

I understand the need for to retire the beloved Gryphon for many reasons.
As of my knowledge, that the Intlvac is not fully functional yet or is
it completely characterized?
Do we have a good understanding and confidence on Intlvac like we do
on gryphon?

I know Maurice and Jim have spent lot of time on the tool, and the
good part is that, they know the Gryphon very well.
I am not very keen on retiring the tool for good.

As of my understanding you can only load max of 2 to 3 wafers in
Intlvac ( I am guessing) with the pump down of 2 hrs.
Gryphon is way faster than that, and handles up to 14 wafers.
It is sad to loose the tool that, we know works well when it is
working and most importantly
staff has spent lot of time on it and they know how to fix it.

I don't know like the idea of getting rid of Gryphon for good. But
that's just me !

I know space is a big issue in the lab, can we some how find a place
for it ( how about outside?)

I also want to make sure that the Intlvac should be fully functional,
before you retire the Gryphon.
The lab members have no other semi clean metal tool that, they can use
other than Gryphon.

Please lab member's and staff let us know your feedback!

Thank you,
Pradeep

On Wed, Feb 8, 2012 at 2:56 PM, Ed Myers <edmyers@stanford.edu> wrote:
> All,
>
> Time has come to retire another tool from it's long term SNF service. With
> the influx of new tools and the characterization of the Intlvac_sputter,
> it's time for the Gryphon metal system to vacate it's space. The Gryphon is
> being removed from the SNF fab during the renovation shut-down. The three
> new PlasmaTherm etchers will be delivered on Wednesday, Feb. 15th. Two of
> these etchers (the metal and dielectric etchers) will be located in the
> space vacated by the Gryphon and the old SCT location.
>
> Depositions which have been done in the Gryphon need to be moved to one of
> the Intlvac metal systems. The Intlvac_sputter is configured with an ion
> source for pre-sputter etch (etch rates >90 Ang/min) and dual AC depositions
> (deposition rates of 1 micron/min for Al). The system is not load lock, so
> the pumpdown to base is longer taking approximately 2 hours. The wafer
> carrier is designed to fit 4, four inch wafers (pieces are allowed) but the
> wafers are not thermally heat sinked. Depositions of pure Al at 1
> micron/min have displayed more surface roughness than what was observed in
> the Gryphon. The Intlvac_sputter characterization report will soon be
> posted on the lab members Wiki.
>
> If you have any questions regarding the Intlvac systems please contact Ed
> Myers.
>
> Regards,
> SNF Staff

waveform amplifier

2012-02-08T15:00:00.000-08:00

Hi all,
I need a waveform amplifier to amplify the voltage of function generator to about 20V (1 kHz is enough).
Does any lab have a waveform amplifier that I can borrow for couple of hours? I want to check whether it works for my experiment and if so we will buy our own. Thanks!
Best,
Xi

Gryphon Sputter Retirement

2012-02-08T14:56:00.001-08:00

All,

Time has come to retire another tool from it's long term SNF service.
With the influx of new tools and the characterization of the
Intlvac_sputter, it's time for the Gryphon metal system to vacate it's
space. The Gryphon is being removed from the SNF fab during the
renovation shut-down. The three new PlasmaTherm etchers will be
delivered on Wednesday, Feb. 15th. Two of these etchers (the metal and
dielectric etchers) will be located in the space vacated by the Gryphon
and the old SCT location.

Depositions which have been done in the Gryphon need to be moved to one
of the Intlvac metal systems. The Intlvac_sputter is configured with an
ion source for pre-sputter etch (etch rates >90 Ang/min) and dual AC
depositions (deposition rates of 1 micron/min for Al). The system is
not load lock, so the pumpdown to base is longer taking approximately 2
hours. The wafer carrier is designed to fit 4, four inch wafers (pieces
are allowed) but the wafers are not thermally heat sinked. Depositions
of pure Al at 1 micron/min have displayed more surface roughness than
what was observed in the Gryphon. The Intlvac_sputter characterization
report will soon be posted on the lab members Wiki.

If you have any questions regarding the Intlvac systems please contact
Ed Myers.

Regards,
SNF Staff

Re: who moves away the computer desk in 213XB

2012-02-08T12:35:00.000-08:00

Xiaoqing,

I moved it, and I just returned it.
It was moved to the corridor when the custodians were removing the water from the floor in the lab this morning.

Kenny
Sent from my iPhone

On Feb 8, 2012, at 12:26 PM, Xiaoqing Xu <steelxu@stanford.edu> wrote:

> Hello Labmembers,
> Does anyone move away the small black computer desk in 213XB? I bought it two weeks ago, for convenience of the users in doing experiments. I saw it yesterday, but can not find it any more. If anyone moves it away, please move it back.
> Thanks a lot!
> Xiaoqing

who moves away the computer desk in 213XB

2012-02-08T12:26:00.001-08:00

Hello Labmembers,
Does anyone move away the small black computer desk in 213XB? I bought it two weeks ago, for convenience of the users in doing experiments. I saw it yesterday, but can not find it any more. If anyone moves it away, please move it back.
Thanks a lot!
Xiaoqing

Renovation Update: Lab reopening

2012-02-07T12:58:00.001-08:00

Hello all --

Progress! Renovation tasks continue. The main Issue is with the
process cooling water which has turned out to be more extensive than
expected (through no fault of our awesome renovation team -- in fact,
they uncovered some undocumented modifications that would have left us
without backup.) So, there will be two all-day shutdowns of the cooling
water planned for tomorrow and Friday this week, in addition to the
other smaller tasks. There will also be a one-day shutdown of the
building nitrogen. In between utility shutdowns, the maintenance staff
continues to turn on and assess/address equipment issues where they can.

With this as the plan of record, we believe we should be able to reopen
the lab some time next week. We should have a more specific day/time in
the next couple of days.

In the meantime, the lab remains closed to all except relevant
personnel. Volunteers are welcome to help us with moving small tools
and tables, as well as wiping down and decontaminating surfaces -- check
with Staff. Please also do not cross red tape barriers in the hall
outside the gowning room, as the crew begins construction of the nano-
Surfaces & Interfaces Lab (nSiL, formerly referred to as the
Nanosynthesis Lab).

Thanks for your patience --

Your SNF Staff

--
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
Paul G. Allen Room 136, Mail Code 4070
Stanford, CA 94305
(650)723-9980
mtang@stanford.edu
http://snf.stanford.edu

where can I get big wafers?

2012-02-07T12:50:00.001-08:00

Hi all,
I'm wondering what the largest commercially available wafers are and where I can order them? By large I am referring to diameter.
Thanks,
Chris

Asking heat press machine

2012-02-07T12:26:00.001-08:00

Dear snf labmembers,

I am wondering where I can use a heat press machine around here at Stanford.

I am trying to bond two PMMA beams and temperature and pressure control is very important.
If you have used it, please let me know.

Thanks,

[Reminder] MSE PhD Dissertation Defense: Naga Phani Aetukuri - Today 3pm CIS-X 101

2012-02-06T09:52:00.001-08:00

Department of Materials Science & Engineering

University PhD Dissertation Defense

Electrically-Triggered Metallization in Single-Crystal Vanadium Dioxide Thin Film Heterostructures

Naga Phani Aetukuri

Research Advisor: Professor James Harris

Co-Advisor: Professor Stuart Parkin

Co-Advisor: Professor Paul McIntyre

February 6, 2012 @ 3:00 PM

(Refreshments will be served starting at 2:45 PM)

Location: Paul G. Allen Auditorium (CIS-X 101)
http://cis.stanford.edu/directions

Vanadium dioxide (VO₂) is metallic at high temperatures but undergoes a metal to insulator transition (MIT) below ~340 K in bulk crystals that is generally attributed to electron-electron correlation effects. This transition can also be engendered by the application of modest electric fields, several orders of magnitude below the electric breakdown field, making this phenomenon potentially useful for two or three terminal switches, depending on its speed and origin.

We have used pulsed laser deposition to prepare epitaxial single-crystalline thin films of VO₂ that show a sharp change in resistance at the MIT for films as thin as 10nm. We find that strain induced by underlying layers can modify the transition temperature of these films. For example, on TiO₂ (001) single-crystal substrates, the transition temperature is reduced to ~290 K, whereas by growing similar films on RuO₂ buffers layers the MIT can be increased up to ~335 K.

A combination of electron-beam and optical lithography was used to fabricate lateral two-terminal nano-devices from VO₂ films deposited directly on TiO₂ substrates. We have observed reversible and reproducible transitions triggered by electric-field but with a delay time varying from as long as 10 ns to as short as 500 ps. The delay time is found to decrease with increasing electric field and temperature. We discuss whether these results indicate the transition is dominated by electronic or by Joule heating effects. In vertical structures with a metallic RuO₂ bottom electrode, we have used a current-sensing atomic force microscope to probe the electric-field-induced MIT in much smaller volumes of VO₂. Reversible switching between insulating and metallic states was observed at modest electric fields for VO₂ layers as thin as 20 nm. These results demonstrate the possibility of triggering an MIT at low voltages and, therefore, at low energies, which is essential for device applications.

Anyone Ever Purchased from SWI?

2012-02-03T15:20:00.000-08:00

Hi Labmembers,

Does anyone have any experience purchasing wafers from SWI (Semiconductor Wafer, Inc.) out of Taiwan?

http://semiwafer.com

Thanks,

Robert Chen
Electrical Engineering Ph.D. Candidate
Harris MBE Group, Stanford University
http://robochen.web.stanford.edu

contest for new SNF logo

2012-02-03T08:27:00.001-08:00

Dear SNF Labmembers,

As we all eagerly await the re-opening of the SNF and the installation,
permitting, and release this spring of the three new PlasmaTherm dry
etchers, the new Oxford III-V etcher, the 2nd Centura epi chamber, our
2nd Fiji PE-ALD, and our 2nd Savannah (to be operated in a glovebox for
molecular vapor deposition), I'd like to invite you to participate in a
competition for a new logo for the SNF. Our current logo (see the
website to check it out) dates to the beginning of NNUN in the
mid-1990s. All with artistic talent, or without it for that matter, are
invited to design a new logo over the next two weeks. This email is
going to the labmember community, but we'd like to open it to your
friends, as well.

The deadline is 5:00 pm, Pacific Time, Friday, February 17. Please send
it in .gif, .jpg, or .pdf format. A committee consisting of the senior
SNF staff and I will select the winner. The prize: a Kindle Fire.

Thanks,
Roger Howe

FINAL PROGRAM- Invitation to Raith / Stanford Advanced Lithography Workshop - February 15, 2012

2012-02-02T17:27:00.001-08:00

This is the final announcement. The latest agenda now includes contributions from Dr. Ivan Kravchenko of Oak Ridge National Laboratory, Kelley Rivoire of Stanford University, James Conway of Stanford University, and Ruud Schmits of TNO. We have already registered ~50% capacity.

Stanford's RAITH150 system has just been upgraded with Raith's unique Fixed Beam Moving Stage (FBMS) capability. In this context, Raith and the Stanford Nanofabrication Facility cordially invite you to attend the Advanced Nanolithography Workshop. This one day workshop will be dedicated to advanced patterning techniques that have been implemented by Raith for both electron and ion beam lithography to enhance nanoscale fabrication beyond traditional vector scan patterning. Please use the link below to automatically register for the workshop. As space is limited, we hope that you can confirm as soon as possible.

When:	Wednesday February 15, 2012
Where:	Allen Building Auditorium (ALLEN 101X), Stanford University
Time:	9:00 AM - 5:00 PM

Click Here to Register

Agenda

9:00 AM - 9:30 AM	Gather, greet and meet over coffee and light snack.
9:30 AM - 9:45 AM	Opening remarks James Conway, Ebeam Technology Group, Stanford Nanofabrication Facility, Stanford University
9:45 AM - 10:45 AM	Zero Stitching Error Lithography by Raith Fixed Beam Moving Stage (FBMS) - For Nanophotonics, Plasmonics, and More Jason E. Sanabia, Ph.D., President & CEO, Raith USA, Inc.
10:45 AM - 11:45 AM	Stitch Error Free Nanofabrication for Photonics Research and Development at TNO Ruud Schmits, Researcher, Nano-instrumentation, TNO
11:45 AM - 12:00 PM	Group Photograph
12:00 PM - 1:00 PM	Lunch served (soup, sandwiches, salads), Allen X Courtyard Patio
1:00 PM - 1:30 PM	Multiply resonant photonic crystal cavities Kelley Rivoire, Ph.D. Candidate with Prof. Jelena Vuckovic, Electrical Engineering, Stanford University
1:30 PM - 2:15 PM	Large area e-beam lithography on insulator and metal substrates Ivan Kravchenko, Ph.D., Center for Nanophase Materials Sciences, Oak Ridge National Laboratory
2:15 PM - 3:15 PM	Zero Stitching Error Lithography by Raith Modulated Beam Moving Stage (MBMS) - Advanced Periodic Patterning Jason E. Sanabia, Ph.D., President & CEO, Raith USA, Inc.
3:15 PM - 4:15 PM	Ion Beam Lithography with Advanced Patterning Modes, Joseph Klingfus, Ph.D., Applications Scientist and Project Manager for the Stanford RAITH150, Raith USA, Inc.
4:15 PM - 5:00 PM	Open discussions

Sent to:jwc@snf.stanford.edu
If you prefer not to receive
future e-mails of this type,
click here

Sent By:

Raith USA, Inc.

2805 Veterans Highway Suite 23

Ronkonkoma New York 11779
United States

To view as a web page click here.

Renovation Update

2012-02-02T12:50:00.001-08:00

Hello all --

Inquiring minds really want to know, but I'm afraid we still do not yet
have a definite lab opening date. Please be assured, progress is very
good and inspections are mostly done. The lab is now officially no
longer a construction zone, so SNF staff were allowed back into the lab
yesterday (yay!) Note that this is ONE WEEK AHEAD of the schedule
posted in December. A lot of whining from us persuaded the project
managers to work hard to bring in the date. Many thanks and kudos to
the excellent construction team who worked extra shifts and weekends to
make it happen.

There are still, however, a number of to-be-resolved issues. Most are
unrelated to the original renovation; they nonetheless prevent the lab
from opening, just yet. Permit inspections highlighted code compliance
issues (who knew there's an ADA requirement that all flashing emergency
beacons, i.e., fire and TGO alarms, be synched?) And some renovation
tasks triggered other upgrade projects. In short, there will continue
to be planned interruptions in building-wide facilities over the next
several days (namely, process cooling water, compressed air and
nitrogen, as well as local facilities testing/validation for the new
building control system). This weekend, there will be another round of
professional cleaning, a best-practices 24-hour "rest time", and then
recertification of the cleanroom Monday.

The SNF staff plans to make as much use of this time as possible.
There was a lot more involved in this shutdown than in our regular
annual routine so will take more time than usual to recover. The
maintenance crew is cautiously turning tools on. Process staff is
decontaminating. Everyone is helping move the portable tools back into
the lab and setting them up again. However, until we are done with the
rolling facilities blackouts, we won't be able to fully turn on and test
tools.

Please be aware that the cleanroom remains off-limits and closed for all
except relevant personnel. Everyone is welcome to view the lab from the
outside (although if all has gone well, you shouldn't see any
significant changes.) But if you'd like to look at it from the inside,
there is only one way: volunteers are welcome to help with
decontamination and wipe downs - though you must accompany a staff
member as there are "dirty zones" and ongoing repair and project work
that must not be disrupted.

Please also be aware that last phase of the renovation, the
Nanosynthesis Lab, is just starting. This means that the hall area
outside the gowning room, just beyond the Receiving area corridor,
remains a construction zone and therefore is off limits to all except
construction crews. Make sure to observe the red tape and signs.

Many thanks for your patience -- we are all very excited about the
renovated lab (you would not believe how quiet the lab is with the new
HEPAs!) and will continue to keep you posted as we get nearer to
bringing up the lab.

Your SNF Staff

--
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
Paul G. Allen Room 136, Mail Code 4070
Stanford, CA 94305
(650)723-9980
mtang@stanford.edu
http://snf.stanford.edu

Final Program and Invitation to Raith / Stanford Advanced Lithography Workshop - February 15, 2012

2012-02-01T13:35:00.001-08:00

When:	Wednesday February 15, 2012
Where:	Allen Building Auditorium (ALLEN 101X), Stanford University
Time:	9:30 AM - 5:00 PM

Click Here to Register

Agenda

9:00 AM - 9:30 AM	Gather, greet and meet over coffee and light snack.
9:30 AM - 9:45 AM	Opening remarks James Conway, Ebeam Technology Group, Stanford Nanofabrication Facility, Stanford University
9:45 AM - 10:45 AM	Zero Stitching Error Lithography by Raith Fixed Beam Moving Stage (FBMS) - For Nanophotonics, Plasmonics, and More Jason E. Sanabia, Ph.D., President & CEO, Raith USA, Inc.
10:45 AM - 11:45 AM	Stitch Error Free Nanofabrication for Photonics Research and Development at TNO Ruud Schmits, Researcher, Nano-instrumentation, TNO
11:45 AM - 12:00 PM	Group Photograph
12:00 PM - 1:00 PM	Lunch served (soup, sandwiches, salads) Allen X Courtyard patio
1:00 PM - 1:30 PM	Multiply resonant photonic crystal cavities Kelley Rivoire, Ph.D. Candidate with Prof. Jelena Vuckovic, Electrical Engineering, Stanford University
1:30 PM - 2:15 PM	Large area e-beam lithography on insulator and metal substrates Ivan Kravchenko, Ph.D., Center for Nanophase Materials Sciences, Oak Ridge National Laboratory
2:15 PM - 3:15 PM	Zero Stitching Error Lithography by Raith Modulated Beam Moving Stage (MBMS) - Advanced Periodic Patterning Jason E. Sanabia, Ph.D., President & CEO, Raith USA, Inc.
3:15 PM - 4:15 PM	Ion Beam Lithography with Advanced Patterning Modes, Joseph Klingfus, Ph.D., Applications Scientist and Project Manager for the Stanford RAITH150, Raith USA, Inc.
4:15 PM - 5:00 PM	Open discussions

Sent to:jwc@snf.stanford.edu
If you prefer not to receive
future e-mails of this type,
click here

Sent By:

Raith USA, Inc.

2805 Veterans Highway Suite 23

Ronkonkoma New York 11779
United States

To view as a web page click here.

lost USB key, tiny purple one

2012-02-01T09:18:00.001-08:00

If you see it let me know. Its one of those really tiny ones that can fit in your wallet. Last seen over by the computer with LEdit, though could have been dropped anywhere...
Cheers,
Chris

EE Ph.D. Oral Examination: Stephanie Claussen, Feb. 10 at 1:00 pm

2012-02-01T09:04:00.001-08:00

Stanford University Ph.D. Oral Examination – Department of Electrical Engineering

Speaker: Stephanie Claussen
Advisor: Professor David A. B. Miller
Date: Friday, February 10, 2012
Time: 1:00 pm (refreshments at 12:45 pm)
Location: Allen-X Auditorium (formerly CIS-X Auditorium) - Room 101

Title:
High-performance Ge/SiGe quantum well waveguide modulators for optical interconnect systems

Abstract:
Electrical interconnects are rapidly nearing fundamental density-related and energy consumption limitations. Scaling a wire down in size does not allow it to carry more information, and the associated power consumption is becoming environmentally-significant. Optical interconnects provide a promising solution, but require CMOS-compatible, high-speed, low-energy optical components in order to be feasible. Ge/SiGe quantum wells (QWs) exhibit the quantum-confined Stark effect, a strong electroabsorption mechanism that enables compact optical modulators for use in future optical interconnect systems.

To design and optimize high-performance modulators, we have experimentally investigated the ultrafast carrier dynamics and transport properties of Ge/SiGe QWs. We discuss the implications of these measured femtosecond carrier lifetimes on the ultimate performance limitations of these devices.

We will then present recent progress toward achieving Ge/SiGe QW modulators integrated with low-loss silicon-on-insulator (SOI) waveguides. Waveguide modulators enable easy integration with other interconnect components and potentially high modulation contrast ratios. However, integration with SOI waveguides requires controllable selective-area epitaxial growth of the QW material. In this talk, we show demonstrations of high-quality selective-area growth of Ge and SiGe and discuss our advancements in the fabrication of Ge/SiGe QW waveguide modulators.

Seminar Reminder: Dr. Paul J. Hung, CellASIC Corporation 4-5pm Allen 101X

2012-01-31T15:43:00.001-08:00

Hi all,

Interesting seminar next Tuesday, January 31, 4-5pm @ Allen 101X Auditorium.

Speaker: Dr. Paul J. Hung, CellASIC Corporation

Topic: Polymer MEMS for Cell-based Microphysiological Platform

Abstract:

In the post-‐genomic era, the next waves of innovation has centered on understanding and utilizing living cells. Physiologic cells are 3D individuals receiving dynamic cues from their perspective microenvironment in order to perform properly; however, current cell-‐based studies are dominantly conducted on static 2D format, leaving a large gap between research findings and clinical applications. Polymer Micro-‐Electrical-‐Mechanical Systems (MEMS) could potentially bridge the gap by providing a more clinically relevant platform to manipulate living cells. Polymer has attractive properties such as biocompatibility, gas permeability, and well-‐ understood surface chemistry. MEMS offer the ability to probe into the time and geometric scale similar to those found in the physiologic cellular microenvironments. The established manufacturing infrastructure further reduces the level of resource investment in project development. In this talk, I will first define the roles for each component of Polymer MEMS in creating cell-‐based microphysiological platforms. A systematic method to design physiologic-‐ relevant cell-‐based circuitry will then be presented. Robust manufacturing processes to implement the design on a user-‐friendly format will be discussed. A toxicity and metabolism screening platform capable of maintaining metabolic functions of liver cells for over 4 weeks will be used as an example. Finally, potential applications of Polymer MEMS for personalized cell diagnosis and therapy will be mentioned.

Short Bio:

Paul J Hung co-‐founded CellASIC Corporation in 2005 to develop and commercialize advanced cell-‐based platforms with Polymer MEMS technology. He received his B.S. degree in Electrical Engineering from National Taiwan University in 1999, and Ph.D. from University of California at Berkeley in Electrical Engineering in 2005. Dr. Hung's research interests include polymer MEMS, biosensors, and platform engineering with the aims to develop the next generation bio-‐ instrumentation, as well as personalized biomedical devices.

Jose Padovani

Graduate Student

Electrical Engineering Department

Stanford University

[Reminder] MSE PhD Dissertation Defense: Marika Gunji (Tomorrow, 2PM)

2012-01-29T15:55:00.001-08:00

Nanostructured SiGe and Ge for Future Electronic Devices

Marika Gunji

Department of Materials Science and Engineering

Advisor: Prof. Paul C. McIntyre

Monday January 30^th 2012, 2PM (Refreshments at 1:45PM)

Location: CIS-X 101 Allen Auditorium
(http://cis.stanford.edu/directions/)

As the packing density of silicon (Si) integrated circuits (IC) increases, scaling requirements are becoming severe. Two approaches are considered to be effective to continue dimensional scaling. One is to alter the device layer so that it is a semiconductor other than silicon. Silicon-germanium (SiGe) and germanium (Ge) are suitable candidates because of their greater carrier mobilities than Si and their process compatibility with Si substrates. Another approach is to change the device or circuit structures so that there is less power consumption and better performance for higher device packing densities in ICs. Nanoscale structures such as ultra-thin semiconductor-on-insulators or nanowires can be incorporated in future transistors.

The presentation will focus initially on synthesis of highly compressively strained SiGe-on-insulator (SGOI) substrate fabrication. The strain relaxation mechanisms in highly compressively-strained (0.67% ~ 2.33% biaxial strain), thin SGOI structures with Ge atomic fraction ranging from 0.18 to 0.81 will be described. SGOI layers (8.7 nm ~ 75 nm thickness) were fabricated by selective oxidization of Si from compressively strained SiGe films epitaxially grown on single crystalline Si-on-insulator (SOI) layers. After high temperature oxidation annealing, ~ 30% of the observed strain relaxation can be attributed to formation of intrinsic SFs and the remaining strain relaxation to stress-driven buckling of the SiGe layers.

The presentation will also discuss the path to obtain higher-k dielectrics on Ge metal-oxide-semiconductor (MOS) devices. To obtain high gate capacitance density dielectrics on high-mobility Ge channels, one solution is to interpose a large energy band gap (E_g) insulator with moderate k as an interface layer between a higher-k dielectric and the channel, since higher-k dielectrics tend to have small E_g. Al₂O₃ layers (k ~ 8) can have stable interfaces with Ge and a large band gap. On the other hand, TiO₂ can achieve a much higher k value (~ 60) when in the rutile crystalline phase, but its conduction band offset with Ge is less than 1 eV. TiO₂/Al₂O₃ bilayers deposited on Ge(100) by ALD can achieve low interface trap density with small leakage current after post-metal forming gas anneal. From measurements performed on MOS capacitors, the maximum capacitance at a given frequency increases after the 450 °C forming gas anneal, indicating that the dielectric constant of TiO₂ increased to ~50 after annealing. Consistent with these results, TEM datae indicate that the ALD-grown TiO₂ phase had predominantly transformed to the rutile phase after annealing.

In order to measure the channel transfer characteristics for this TiO₂ (7.5 nm)/Al₂O₃ (2.5 nm)/Ge(100) stack, pMOSFETs with long channels (L_g = 2 – 30 um) were fabricated. The devices show a subthreshold swing of 115 mV/dec and an on-state current of 60 mA/mm. Measured peak hole mobility reaches 370 cm²/Vs, which suggests the feasibility and potential of TiO₂/Al₂O₃/Ge gate stacks for high performance MOSFETs.

--
---------------------------------
Marika Gunji

PhD Candidate
McIntyre Group
Department of Materials Science and Engineering
Stanford University
E-mail: gunjim@stanford.edu

--
---------------------------------
Marika Gunji

PhD Candidate
McIntyre Group
Department of Materials Science and Engineering
Stanford University
E-mail: gunjim@stanford.edu

SNF Renovation Update

2012-01-27T18:34:00.001-08:00

Dear Labmembers --

After 6 weeks of extended shutdown and construction, we are very pleased to report that the renovation is going extremely well. The construction crew is knowledgeable, professional, and know our concerns -- they worked extra shifts and weekends to help us minimize the shutdown time and impact to labmembers' research. Main construction work is done and has passed most of the inspections with the County.

There are, however, still a few inspections outstanding, so until these are done, we won't have a definite date as to when the lab will be reopened for use. We will keep everyone posted as we get more information. Please check out the behind-the-scenes photos of the construction, links on the SNF website (see News links.)

Your SNF staff

--  Mary X. Tang, Ph.D. Stanford Nanofabrication Facility Paul G. Allen Room 136, Mail Code 4070 Stanford, CA  94305 (650)723-9980 mtang@stanford.edu http://snf.stanford.edu

Seminar - Dr. Paul J. Hung, CellASIC Corporation

2012-01-26T13:40:00.001-08:00

Hi all,

Interesting seminar next Tuesday, January 31, 4-5pm @ Allen 101X Auditorium.

Speaker: Dr. Paul J. Hung, CellASIC Corporation

Topic: Polymer MEMS for Cell-based Microphysiological Platform

Abstract:

Short Bio:

Jose Padovani

Graduate Student

Electrical Engineering Department

Stanford University

electrochemical CV measurement

2012-01-24T15:06:00.001-08:00

Hi Labmembers,

Does anyone know where I might be able to do an electrochemical capacitance-voltage profiling measurement? I'm looking to characterize a III-V film on a heavily doped n-type Si substrate.

Thanks,
Angie

Venture Clinic Today, Tuesday, Allen 101, 4 pm

2012-01-24T14:03:00.001-08:00

Dear labmembers --

Thinking about starting up a company while you're waiting for the lab
renovation to end? Shahin Farschi (Lux Capital) and Gavin McCraley
(Morrison Foerster) will be here to host an open discussion and answer
questions about startups. The Venture Clinic will start at 4 pm,
Tuesday, Jan. 24, in Allen 101.

--
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
Paul G. Allen Room 136, Mail Code 4070
Stanford, CA 94305
(650)723-9980
mtang@stanford.edu
http://snf.stanford.edu

MSE PhD Dissertation Defense: Naga Phani Aetukuri - 6th Feb 3pm CIS-X 101

2012-01-23T14:09:00.001-08:00

Department of Materials Science & Engineering

University PhD Dissertation Defense

Electrically-Triggered Metallization in Single-Crystal Vanadium Dioxide Thin Film Heterostructures

Naga Phani Aetukuri

Research Advisor: Professor James Harris

Co-Advisor: Professor Stuart Parkin

Co-Advisor: Professor Paul McIntyre

February 6, 2012 @ 3:00 PM

(Refreshments will be served starting at 2:45 PM)

Location: Paul G. Allen Auditorium (CISX 101)
http://cis.stanford.edu/directions

Blue Tape

2012-01-21T17:18:00.001-08:00

Hi All,

Does anyone have some blue tape to spare? I can pay you with a modicum of chocolate for your generosity. I would appreciate it if I could have the tape by tomorrow afternoon.

Cheers,

Vijay

(650) 453-8564

Venture Clinic, Tues, 1/24 4 pm, Allen 101

2012-01-19T14:49:00.001-08:00

Dear Labmembers -

Interested in starting a company, joining a startup, or just learning more
about starting, funding, and raising money for fledgling technology
companies? Join VC Clinic where Shahin Farshchi, Principal at Lux Capital
and Gavin McCraley, Of Counsel at law firm Morrison Forrester discuss and
answer questions on mechanics and challenges of creating and growing
technology companies. Venture Clinic will be held at 4PM Tuesday, January
24th in Allen 101.

--
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
Paul G. Allen Room 136, Mail Code 4070
Stanford, CA 94305
(650)723-9980
mtang@stanford.edu
http://snf.stanford.edu

Oral Exam Announcement: Soogine Chong

2012-01-18T10:04:00.001-08:00

Stanford University PhD Oral Defense - Department of Electrical Engineering
Title: Design and Fabrication of Nanoelectromechanical (NEM) Relays Integrated with CMOS
Speaker: Soogine Chong
Advisor: Professor H.-S. Philip Wong

Date: Friday, January 20, 2012
Time: 10:00 AM (Refreshments served at 9:45 AM)
Location: Paul G. Allen Auditorium (Formerly CISX-101)

Abstract:
CMOS scaling following Moore's Law has resulted in a dramatic increase in computing power over the decades. This was possible by scaling down the CMOS transistors, both in dimensions and voltage. However, continuous voltage scaling is becoming increasingly difficult because of the increase in subthreshold leakage. This increase is inevitable with threshold voltage scaling, since the subthreshold slope is theoretically limited to be larger than 60 mV/dec. Nanoelectromechanical (NEM) relays are promising devices to overcome this voltage scaling issue because of their sharp on/off transition characteristics and zero off-state leakage. However, these devices have long switching times due to their long mechanical delays. By combining NEM relays with CMOS, it is possible to capitalize on the benefits of each technology.

In this talk, I propose a novel NEM-CMOS SRAM cell design, followed by an experimental demonstration of the fabrication of NEM relays and their integration with CMOS. In the proposed NEM-CMOS SRAM cell, NEM relays replace the pull-down NMOS transistors of a conventional six-transistor CMOS SRAM cell. Simulations show that this hybrid cell has an increased stability and a lower leakage compared to those of a conventional CMOS SRAM cell, without the long mechanical delay of the NEM relay limiting the performance. Despite these advantages, this circuit has not yet been experimentally demonstrated. As an initial step toward the demonstration, I first demonstrate the fabrication of NEM relays without CMOS in two different versions: optically patterned scaled-up devices and e-beam patterned scaled-down devices. With the scaled down devices that have a CMOS-compatible fabrication process, I show an on-chip CMOS inverter successfully driving a NEM relay at the same supply voltage, demonstrating the feasibility of NEM-CMOS integration.

--
Soogine Chong
Stanford University
PhD candidate in Electrical Engineering
e-mail: sgchong@stanford.edu
mobile: +1-650-804-8556

Re: transparent conductive substrate

2012-01-17T19:49:00.001-08:00

Hi Xi,

We used to buy 4" 1mm thick corner glass wafers coated by ITO for
several times in the past. The surface resistance was around 20 ohm/sq.
The vendor was TFD (Thin Film Devices). It's about 5 years passed since
our last purchase, but they are still in business, apparently:
http://www.tfdinc.com/

Good luck,
Sergei

On 1/14/2012 6:19 PM, Xi Xie wrote:
> Hi All,
> I need a transparent conductive substrate/film/cable/tape, something like Si wafer or Copper tape but need to be transparent and have good conductivity. Anyone have any idea anything like that and I can readily buy?
> Also I try to deposite Au on glass slide but the conductivity is low. Any one have better idea of how to do that? Thanks!
>
> Best,
> Xi

kapton tape

2012-01-17T17:19:00.000-08:00

Hi all,

I'm trying to prepare some samples for Tom Carver's lab and need some kapton tape (probably ~20cm). Does anyone have some I could use? It would be greatly appreciated.

Thanks,

Scott

Invitation to Raith / Stanford Advanced Lithography Workshop - February 15, 2012

2012-01-17T17:11:00.001-08:00

Greetings Lab Members and the Raith Ebeam Lithography Community:

I am pleased to announce, and to invite you to join us for an Advanced Nanolithography Workshop. This will be held on Wednesday February 15, 2012 with additional demonstrations and application specific tutorials to be held the following day. You are requested to register using the links below.

Thank you for your support!

James Conway

SwiftpageEmail

Stanford's RAITH150 system has just been upgraded with Raith's unique Fixed Beam Moving Stage (FBMS) capability. In this context, Raith and the Stanford Nanofabrication Facility cordially invite you to attend the Advanced Nanolithography Workshop. This one day workshop will be dedicated to advanced patterning techniques that have been implemented by Raith for both electron and ion beam lithography to enhance nanoscale fabrication beyond traditional vector scan patterning. Please use the link below to automatically register for the workshop. As space is limited, we hope that you can confirm as soon as possible.

When:	Wednesday February 15, 2012
Where:	Allen Building Auditorium (ALLEN 101X), Stanford University
Time:	9:30 AM - 4:00 PM

Click Here to Register

Agenda

9:30 AM - 10:00 AM	Gather, greet and meet over coffee and light snack.
10:00 AM - 11:00 AM	Zero Stitching Error Lithography by Raith Fixed Beam Moving Stage (FBMS) - Part I - For Nanophotonics, Plasmonics, and More Jason E. Sanabia, Ph.D., President & CEO, Raith USA, Inc.
11:00 AM - 12:00 PM	Application of FBMS towards nanophotonics/plasmonics External Guest TBD
12:00 PM - 1:00 PM	Lunch served (soup, sandwiches, salads)
1:00 PM - 2:00 PM	Zero Stitching Error Lithography by Raith Fixed Beam Moving Stage (FBMS) - Part II - Advanced Periodic Patterning Jason E. Sanabia, Ph.D., President & CEO, Raith USA, Inc.
2:00 PM - 3:00 PM	Ion Beam Lithography with Advanced Patterning Modes, Joseph Klingfus, Ph.D., Applications Scientist and Project Manager for the Stanford RAITH150, Raith USA, Inc.
3:00 PM - 4:00 PM	Open discussions

Sent to:jwc@snf.stanford.edu
If you prefer not to receive
future e-mails of this type,
click here

Sent By:

Raith USA, Inc.

2805 Veterans Highway Suite 23

Ronkonkoma New York 11779
United States

To view as a web page click here.

EE PhD Oral Examination -- Kelley Rivoire, Fri. Jan 20, 2 pm, Nano 232

2012-01-17T16:44:00.000-08:00

Stanford University PhD Oral Defense - Department of Electrical Engineering

Title: Nonlinear frequency conversion in III-V semiconductor photonic crystals
Speaker: Kelley Rivoire
Advisor: Jelena Vuckovic

Date: Friday, Jan. 20, 2012
Time: 2 pm (refreshments served at 1:45 pm)
Location: Nano Building, room 232

Abstract:

Nonlinear optical processes provide a physical mechanism for
converting the frequency of light. This allows the generation of
tunable light sources at wavelengths inaccessible with lasers, leading
to a diverse set of applications in fields such as spectroscopy,
sensing, and metrology. To make these processes efficient has
conventionally required relatively exotic materials that are
incompatible with state of the art nanofabrication, resulting in
large-area devices that operate at high optical powers and cannot be
integrated with on-chip optical and electronic circuits.

In this talk, I will show how optical nanocavities, by localizing
light into sub-cubic optical wavelength volumes with long photon
storage times, can greatly enhance the efficiency of nonlinear
frequency conversion processes in III-V semiconductors, while
simultaneously shrinking the device footprint, reducing the operating
power, and providing a scalable on-chip platform. This approach also
enables on-chip quantum frequency conversion interfaces, which are
crucial for the construction of quantum networks. I will first
describe how photonic crystal nanocavities in gallium phosphide can
generate second harmonic radiation with only nanowatts of coupled
optical powers, and efficiency many orders of magnitude greater than
in previous nanoscale devices. We extend this approach to demonstrate
sum-frequency generation in GaP photonic crystal cavities with
multiple cavity modes, as well as broadband upconversion employing
photonic crystal waveguides. I will then discuss how we can integrate
nanocavity-enhanced second harmonic generation with a single quantum
dot to create a single photon source triggered at 300 MHz by a
telecommunication wavelength laser coupled with an external
electro-optic modulator, a simpler and faster configuration than
standard approaches. Finally, I will present the design and
characterization of multi-resonant photonic crystal nanocavities with
large frequency separation that can further reduce the powers of all
of the aforementioned processes.

MSE PhD Dissertation Defense: Marika Gunji (Mon January 30th, 2PM)

2012-01-16T12:42:00.001-08:00

Nanostructured SiGe and Ge for Future Electronic Devices

Marika Gunji

Department of Materials Science and Engineering

Advisor: Prof. Paul C. McIntyre

Monday January 30^th 2012, 2PM (Refreshments at 1:45PM)

Location: CIS-X 101 Allen Auditorium

(http://cis.stanford.edu/directions/)

As the packing density of silicon (Si) integrated circuits (IC) increases, scaling requirements are becoming severe. Two approaches are considered to be effective to continue dimensional scaling. One is to alter the device layer so that it is a semiconductor other than silicon. Silicon-germanium (SiGe) and germanium (Ge) are suitable candidates because of their greater carrier mobilities than Si and their process compatibility with Si substrates. Another approach is to change the device or circuit structures so that there is less power consumption and better performance for higher device packing densities in ICs. Nanoscale structures such as ultra-thin semiconductor-on-insulators or nanowires can be incorporated in future transistors.

The presentation will focus initially on synthesis of highly compressively strained SiGe-on-insulator (SGOI) substrate fabrication. The strain relaxation mechanisms in highly compressively-strained (0.67% ~ 2.33% biaxial strain), thin SGOI structures with Ge atomic fraction ranging from 0.18 to 0.81 will be described. SGOI layers (8.7 nm ~ 75 nm thickness) were fabricated by selective oxidization of Si from compressively strained SiGe films epitaxially grown on single crystalline Si-on-insulator (SOI) layers. After high temperature oxidation annealing, ~ 30% of the observed strain relaxation can be attributed to formation of intrinsic SFs and the remaining strain relaxation to stress-driven buckling of the SiGe layers.

The presentation will also discuss the path to obtain higher-k dielectrics on Ge metal-oxide-semiconductor (MOS) devices. To obtain high gate capacitance density dielectrics on high-mobility Ge channels, one solution is to interpose a large energy band gap (E_g) insulator with moderate k as an interface layer between a higher-k dielectric and the channel, since higher-k dielectrics tend to have small E_g. Al₂O₃ layers (k ~ 8) can have stable interfaces with Ge and a large band gap. On the other hand, TiO₂ can achieve a much higher k value (~ 60) when in the rutile crystalline phase, but its conduction band offset with Ge is less than 1 eV. TiO₂/Al₂O₃ bilayers deposited on Ge(100) by ALD can achieve low interface trap density with small leakage current after post-metal forming gas anneal. From measurements performed on MOS capacitors, the maximum capacitance at a given frequency increases after the 450 °C forming gas anneal, indicating that the dielectric constant of TiO₂ increased to ~50 after annealing. Consistent with these results, TEM datae indicate that the ALD-grown TiO₂ phase had predominantly transformed to the rutile phase after annealing.

In order to measure the channel transfer characteristics for this TiO₂ (7.5 nm)/Al₂O₃ (2.5 nm)/Ge(100) stack, pMOSFETs with long channels (L_g = 2 – 30 um) were fabricated. The devices show a subthreshold swing of 115 mV/dec and an on-state current of 60 mA/mm. Measured peak hole mobility reaches 370 cm²/Vs, which suggests the feasibility and potential of TiO₂/Al₂O₃/Ge gate stacks for high performance MOSFETs.

--
---------------------------------
Marika Gunji

PhD Candidate
McIntyre Group
Department of Materials Science and Engineering
Stanford University
E-mail: gunjim@stanford.edu

LEdit Macro Examples?

2012-01-15T17:17:00.001-08:00

Hi all,
I'm trying to use a macro to create a layout in LEdit. I was wondering if anyone had any example macros they could share with me.
Thanks,
Chris

transparent conductive substrate

2012-01-14T18:19:00.001-08:00

Hi All,
I need a transparent conductive substrate/film/cable/tape, something like Si wafer or Copper tape but need to be transparent and have good conductivity. Anyone have any idea anything like that and I can readily buy?
Also I try to deposite Au on glass slide but the conductivity is low. Any one have better idea of how to do that? Thanks!

Best,
Xi

NNIN computing facility

2012-01-12T14:12:00.000-08:00

All

This is a great resource. please contact Zhiyong for more info.

Art

---------- Forwarded message ----------
From: Zhiyong Zhang
Date: Thursday, January 12, 2012
Subject: NNIN computing facility
To: Artit Wangperawong <artitw@stanford.edu>

Artit,

Stanford is one of the sites of NNIN with computing capabilities. NNIN provides facilities for academic and industrial users. We here at Stanford have a cluster with 512 cores and a large range of software packages, including various ab inito packages such as QMC and various DFT packages. Here is some simple description of the facility at Stanford, http://www.stanford.edu/group/nnin-computing/ and at other sites which have the computing facilities, http://www.nnin.org/nnin_compsim.html. You can also install your own software for your simulations and use the cluster for development purposes.

If you need to access the cluster for your simulations I will be happy to set it up for you. Also if you know of anybody who could benefit from using the cluster, please feel free to pass the word to them also.

Best,

Zhiyong

Fwd: J.A. Woollam WVASE32 Short Course

2012-01-12T13:26:00.001-08:00

Please contact Veronica Cockerill at JA Woollam if you are interested in attending.

-------- Original Message --------

Subject:	J.A. Woollam WVASE32 Short Course
Date:	Thu, 12 Jan 2012 14:41:30 -0600
From:	Veronica Cockerill <vcockerill@jawoollam.com>
To:	WoollamMailList@jawoollam.com

Dear J.A. Woollam Customers,

We would like to invite those of you who use our WVASE32 software to the next WVASE32 Data Analysis Fundamentals Short Course. It will be held March 6-9, 2012 at the University of North Carolina Charlotte. I have attached a course description and registration form. If you would like to attend, please fill out the registration form completely and fax or email to me by February 24, 2012. Once I receive your registration form, I will send a confirmation email.

This course will focus on data analysis methods for spectroscopic ellipsometry, using WVASE32 software, with a significant amount of "hands-on" computer time. For this reason, participants should be familiar with WVASE32 software.

NOTE: Many of you use our other data analysis software, CompleteEASE. A course dedicated to WVASE32 will not be of benefit to you if you use CompleteEASE. They are two completely different programs. The next CompleteEASE short course has not been scheduled yet. Once it is, I will notify you of that course. Thank you for your patience.

If you have any questions, please let me know.

Best regards,
Veronica

--

*******************************
Veronica Cockerill
Marketing Coordinator
J. A. Woollam Co., Inc.
645 M Street, Suite 102
Lincoln, NE 68508
vcockerill@jawoollam.com
Phone: (402)477-7501 x101
Fax: (402)477-8214

CVD seminars during Winter Quarter

2012-01-03T12:10:00.001-08:00

During the Winter Quarter on Tuesdays at 1:30 pm (except for February 21), I plan to give a series of informal talks on CVD - including epi. The talks will be based on fairly old material, but might provide some useful background for those using or interested in CVD.

The first talk will be on Tuesday, January 10, starting at 1:30 pm, in Allen - 338X.

A (perhaps somewhat overly ambitious) outline based on a previous short course is attached.

Ted

Re: critical point dryer

2011-12-28T10:16:00.001-08:00

Joo Yong:

If you are asking for who has a critical point dryer in the Bay Area,
I'm pretty certain that our friends at UC Berkeley have a Tousimis unit
that is very similar to ours.

Let me know if you need contact information over there.

Thanks,

John

On 12/27/2011 10:31 PM, Joo Yong Sim wrote:
> Dear SNF users,
>
> I was wondering if anyone had experience in a critical point dryer
> outside of SNF.
>
> If anyone could give me any advice, I would appreciate it.
>
> Thanks,
>
> Joo Yong

Critical Point Drying

2011-12-28T08:18:00.000-08:00

Hello Joo,

I have very little experience in critical point drying but here is
what I have learned this fall doing CPD.

(1) Do a trial run with your system first to know you can control the
temp of the water jacket accurately. This is important for maintaining
both temp and pressure, which can effect end results.

(2) Always try to let your gels sit overnight, and if possible in an
oven near 40-60 degrees C, to thoroughly form any bonds that are
available and complete the gelation.

(3) Depending on the gel your trying to dry, it may require several
hours of ethanol soaking to replace the water. I have learned that
many times it is necessary to move up in EtOH concentration in step
changes, starting near 10-20% and moving up to 200 proof. this could
take 2 or 3 days.

This may apply more to my system than your own and only some of my
gels have been successful, they have alot of glycerol in them, but
this is what I have learned thus far. I hope it helps.

-Travis

critical point dryer

2011-12-27T22:31:00.000-08:00

Dear SNF users,

I was wondering if anyone had experience in a critical point dryer outside of SNF.

If anyone could give me any advice, I would appreciate it.

Thanks,

Joo Yong

Cr sputtering

2011-12-23T10:48:00.001-08:00

Dear SNF users,

I was wondering if anyone had experience in depositing chromium by magnetron sputtering and could offer some advice on how to produce smooth homogenous films.

I'll provide some TEM images and deposition conditions if anyone could offer help on how to improve the films.

Regards,

Patrick

Solder Wick/Copper Braid

2011-12-17T07:56:00.001-08:00

Hi Folks,

Does anyone happen to have some Solder Wick I can use later this morning (say around 10:30AM or 11:00AM)?

Thank you,

Vijay

Shutdown stsetch2 SNF 2011-12-15 16:13:53: for renovation

2011-12-15T16:13:00.001-08:00

thick su8

2011-12-15T14:32:00.000-08:00

Hello Labmembers,
Hope everyone is enjoying their first days of freedom!
I was wondering if anyone has experience with oober-doober thick su8 layers? I'm talking on the orders of 250um to 1mm...
Any information/ experience you can pass on to me would be very helpful.
Thanks, and hope you enjoy your break,
Max Shulaker

Renovation Countdown: 24 hours!

2011-12-13T17:01:00.001-08:00

Dear labmembers --

All tools will be shutdown by Wed. afternoon. Most analytical tools
will be removed from the lab as well. At 5 pm the lab will officially
close for business. Thanks all, for cleaning up!

And see you next year -- the lab will still look like the same old car,
but will have a shiny new engine underneath --

Happy Holidays --

Your SNF Staff

--
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
Paul G. Allen Room 136, Mail Code 4070
Stanford, CA 94305
(650)723-9980
mtang@stanford.edu
http://snf.stanford.edu

Found USB Stick in Gowning Room

2011-12-13T16:12:00.001-08:00

Dear All,

A staff member found a USB stick in the gowning room. If it’s yours please come by and describe it because it’s somewhat unique. I’m in cubicle #41 on the first floor of the Allen Building.

Maureen

EE412 Final Presentations - Now!

2011-12-13T15:53:00.001-08:00

Hi all --

Come by for pizza and a chance to hear what some of your labmates have
been up to... EE412 presentations in just a few minutes, in the Annex
Auditorium!

Mary

--
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
Paul G. Allen Room 136, Mail Code 4070
Stanford, CA 94305
(650)723-9980
mtang@stanford.edu
http://snf.stanford.edu

Reminder: EE412 Final Presentations TODAY, 4 pm, Annex Auditorium

2011-12-13T14:41:00.001-08:00

Dear Labmembers --

We are wrapping up another term -- and another session of EE412. Final
presentations will be given on Tuesday, Dec. 13, starting at 4 pm in the
AllenX Auditorium. Please come and see what your fellow labmates have
been up to. And be inspired to sign up for Spring term (when there will
be even more new tools to characterize!)

The agenda is as follows:

3:40-4:00 -- Pizza

4:00-4:10 -- A few words from our Instructors

4:10-4:35 -- Shane Crippen: Characterizing the Innotec for Sidewall
Electrodes Using Shadow Mask.

4:35-5:00 -- Tom Gwinn: Developing an Anisotropic Plasma Etch Process
for Thick Tungsten in the P5000

5:00-6:00 -- Insun Park, Young Ik Sohn, and Joo Yong Sim:
Characterization of Fiji ALD Film Quality and Conformality in High
Aspect Ratio/Deep Etched Structures

Check out what previous sessions of EE412 have accomplished by going to
the SNF wiki at:https://snf.stanford.edu/SNF/processes/ee412/

Hope to see you there --

Your EE412 Instructors

--
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
Paul G. Allen Room 136, Mail Code 4070
Stanford, CA 94305
(650)723-9980
mtang@stanford.edu
http://snf.stanford.edu

Re: Oxygen/Argon Plasma Ethching

2011-12-13T06:41:00.001-08:00

Orlando,

I think Nanostructures can help you out. They are located in Santa Clara.

http://www.nanostructures.com/

Linda W.

From: "Orlando Trejo" <trejo10@stanford.edu>
To: labmembers@snf.stanford.edu
Sent: Monday, December 12, 2011 1:35:37 PM
Subject: Oxygen/Argon Plasma Ethching

Dear SNF member,

Do you know of an outside source/vendor that can provide oxygen and argon plasma etching services or access to their etchers?

Thank you,

Orlando

--
Orlando Trejo, Ph.D. Candidate
Nanoscale Prototyping Laboratory
Dept. of Mechanical Engineering
Stanford University
npl-web.stanford.edu

Comment stsetch2 SNF 2011-12-13 03:40:27: broken wafer

2011-12-13T03:40:00.001-08:00

wafer broke during etch. some wafer pieces still inside chamber

Novel material wafer vendors?

2011-12-12T15:50:00.000-08:00

Hi all,
Has anyone had experience purchasing wafers of novel materials (CaF2, ZnSe, ZnS, InP, diamond, etc)? I am looking for vendors and would appreciate any leads.
Cheers,
Ken

EE412 Final Presentations: Tuesday, Dec. 13, 4 pm

2011-12-12T15:38:00.001-08:00

Dear Labmembers --

The agenda is as follows:

3:40-4:00 -- Pizza

4:00-4:10 -- A few words from our Instructors

4:10-4:35 -- Shane Crippen: Characterizing the Innotec for Sidewall
Electrodes Using Shadow Mask.

4:35-5:00 -- Tom Gwinn: Developing an Anisotropic Plasma Etch Process
for Thick Tungsten in the P5000

5:00-6:00 -- Insun Park, Young Ik Sohn, and Joo Yong Sim:
Characterization of Fiji ALD Film Quality and Conformality in High
Aspect Ratio/Deep Etched Structures

Check out what previous sessions of EE412 have accomplished by going to
the SNF wiki at: https://snf.stanford.edu/SNF/processes/ee412/

Hope to see you there --

Your EE412 Instructors

--
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
Paul G. Allen Room 136, Mail Code 4070
Stanford, CA 94305
(650)723-9980
mtang@stanford.edu
http://snf.stanford.edu

Oxygen/Argon Plasma Ethching

2011-12-12T13:35:00.000-08:00

Dear SNF member,

Do you know of an outside source/vendor that can provide oxygen and argon plasma etching services or access to their etchers?

Thank you,

Orlando

--
Orlando Trejo, Ph.D. Candidate
Nanoscale Prototyping Laboratory
Dept. of Mechanical Engineering
Stanford University
npl-web.stanford.edu

Re: Problem stsetch2 SNF 2011-12-10 17:36:57: turbo pump not coming up to speed

2011-12-12T10:00:00.003-08:00

Water to the turbo has been restored.

Re: Problem stsetch2 SNF 2011-12-11 14:06:01: RF generator software interlock error

2011-12-12T10:00:00.001-08:00

Reset the chiller pump/compressor

Re: Problem stsetch2 SNF 2011-12-11 16:23:12: Antanna Chiller Flow Switch Fault

2011-12-12T09:59:00.001-08:00

Reset the chiller pump/compressor

Problem stsetch2 SNF 2011-12-11 16:23:12: Antanna Chiller Flow Switch Fault

2011-12-11T16:23:00.001-08:00

The process will not run. The bottom green arrow on the PM screen is not coming on. It has a flow fault for the cooling water going to the antanna. Tried turning off and on the chiller. Also opened and closed the coonectors on this cooling line. I expect the fault is because the chiller has marginal flow and needed to be rebuilt. This an old problem. Jim

Problem stsetch2 SNF 2011-12-11 14:06:01: RF generator software interlock error

2011-12-11T14:06:00.001-08:00

13 MHz coil & platen won't start due to an active software interlock. Retried after clearing exception for 5-6 times, keep getting the same error

Lab Update, 12/11 11 am

2011-12-11T11:13:00.001-08:00

Dear labmembers --

Process cooling water is back on. Maintenance crew is working in the
lab to bring tools up. Here's a summary:

- Work is being done on the network. Sunray Coral is fine (internal
network.) Access to remote Coral and SNF emails may be spotty.
- ASML, innotec, metalica, gryphon so far look on track to be up soon.
ETA is around 1 pm. (Thanks Gary & Jim).
- Amtetcher is down hard; heat exchanger pump didn't survive.
P5000etch, mrc, and lampoly are up or nearly so. Stsetch2 is getting
there (Thanks Cesar!)

Many thanks also to Tony Padilla, the Facilities tech who came in both
last night and this morning to check on the water.

Mary

--
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
Paul G. Allen Room 136, Mail Code 4070
Stanford, CA 94305
(650)723-9980
mtang@stanford.edu
http://snf.stanford.edu

Cooling water update

2011-12-10T23:27:00.001-08:00

Dear labmembers --

The campus cooling water system is still being repaired. We've been
told it may be a few more hours. The campus cooling loop tempers the
building and lab air, so you will have noticed the lab getting quite
warm. Our building loop is cooled by the campus loop; we are now
running equipment using city water in the building loop. The
temperature is better now, but the pressure is much lower than most
tools would like, so some new equipment errors may arise.

The high water temperature appears to have caused our building loop to
spring a few significant leaks in the basement. So, there are concerns
that pressurizing our building loop may result in a flood. We are
scheduling additional Facilities and SNF staff in on Sunday morning to
be on-hand when the building loop is turned back on.

In short, tools with process cooling water problems will remain down for
the evening. We hope to be in a good position to restart tools in the
morning. Our apologies for the inconvenience, especially coming so
close to the shutdown. Please have patience as we all work through this.

Your SNF staff

--
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
Paul G. Allen Room 136, Mail Code 4070
Stanford, CA 94305
(650)723-9980
mtang@stanford.edu
http://snf.stanford.edu

Problem stsetch2 SNF 2011-12-10 17:36:57: turbo pump not coming up to speed

2011-12-10T17:36:00.001-08:00

turbo pump not coming up to speed... tried several attempts

5:00 pm - Cooling water problem in the lab

2011-12-10T17:08:00.001-08:00

Dear labmembers --

We've just been informed that there's a cooling water problem throughout
the campus. There is flow, but the temperature is high. It is also
possible that there are irregularities in flow. Tools using cooling
water will not function if temperature and flow are not within certain
limits and will stop processing. Facilities believes the problem will
be resolved within a couple of hours. In the meantime, we have several
reports of tools with turbo and RF failure. The ASML will not reboot.
These are all likely due to the cooling water problem. Once the water
is brought back into spec, most tools will reset themselves. In the
meantime, please do not override or clear errors, or reboot tools that
make use of cooling water -- the tools are protecting themselves.

Thanks,

Your SNF staff

we have developers

2011-12-09T14:00:00.001-08:00

Hi all,

All the canisters are full and we should be just fine for manual
development as well.

happy processing
litho team

Non standard chemicals

2011-12-09T10:37:00.001-08:00

Hello all,

I know that every day you are bombarded with emails, so here is one more.
please help me

to some what clean up the small bottles of non-standard chemicals.

Please check the yellow flammable cabinet in the back and get rid of chemicals that
are expired and you do not want . This will include chemicals in the refrigerator and the freezer.

As you know, we will lose electricity for 3 days so if you have a way of moving your chemicals
to your own lab that would be very wise.

mahnaz

Does anyone have some spin-on glass to spare?

2011-12-08T22:19:00.001-08:00

Hi there,

We would like to try spin-on glass in our project and would like to know
if anyone would be kind enough to share a little spin-on glass with us.
We just need a little to spin one or two small chips. This SOG should
be SILICATE BASED only.

Thank you for your attention.

Ben Jian
Cell: 408-515-2783

Pls Remove Personal Items by 12/12 am

2011-12-08T18:40:00.001-08:00

Hi all --

We've been asked: what time do lab bins need to be emptied? Please
clear items by noon Monday (Dec. 12). We know you're working hard to
get as much done as possible before the extended shutdown. Staff,
however, are stretching to get everything buttoned up before shutdown.
Please help by collecting and storing your belongings in a safe place.

Thanks,

Your SNF Staff

--
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
Paul G. Allen Room 136, Mail Code 4070
Stanford, CA 94305
(650)723-9980
mtang@stanford.edu
http://snf.stanford.edu

Comment stsetch2 SNF 2011-12-08 18:11:36: etch test

2011-12-08T18:11:00.001-08:00

running and SOI recipe, etch profile and etch rate appears very similar to before the RF generator went out. would still advise running a test wafer to be safe.

Re: Comment stsetch2 SNF 2011-12-06 15:10:41: Update

2011-12-08T16:01:00.003-08:00

Archived

Re: Shutdown stsetch2 SNF 2011-12-05 10:47:40: RF generator repeatedly faulting

2011-12-08T16:01:00.001-08:00

Replaced the RF generator. Currently testing and qualifying the SOI recipe. We will release it by 6:00pm

Re: Bake Sale update

2011-12-08T15:55:00.000-08:00

My pleasure. Together we thrive. Jasmine, thanks too for organizing and seeing it to the end. Be blessed to bless.
Hulda
Sent on the Sprint® Now Network from my BlackBerry®

-----Original Message-----
From: Jasmine Hasi <jazz9152@slac.stanford.edu>
Date: Wed, 7 Dec 2011 23:54:20
To: <mbaran@stanford.edu>
Cc: <labmembers@snf.stanford.edu>; <cis-building@cis.stanford.edu>; <huldamuaka@hotmail.com>; <nlsmee@usfca.edu>; <smee@speakeasy.net>; <muchemu@gmail.com>; <akamau2@hotmail.com>
Subject: Bake Sale update

Dear All,

I want to say a huge thank you for everyone who bought goodies at the
bake sale or made a donation. We made a staggering $365...Wohoooo!

All the proceeds will be going directly to Insight World Aid.

insightworldaid.org

I have cc'ed Nancy Smee who is one of the Board of Directors volunteering
for Insight, if you have any questions or interested to get involved.

In addition, I want to thank the amazing chefs who worked hard to make
this sale possible. A huge thank you to Maureen B, Hulda, Margaret,
Njoki, Mahnaz, Astrid, Uli, and Nancy for helping and working behind
the scenes.

Thank you all once again for your support and making this possible :)

Wish you all a Happy Holidays and a great start to the New year.

Jasmine

we will get more Developer

2011-12-08T15:28:00.001-08:00

All,

Try to make it through to night, Gary and Mario just added the last
bottles of developers to
canisters. we ordered 4 cases of developer, that is equivalent to 16
more gallons.

We have been told that we will get it by tomorrow morning ( thanks to
David, begging).

We have used 34 gallons of developer since last week.
Slow down people.

mahnaz

Renovation Countdown: 7 days!!

2011-12-07T23:18:00.001-08:00

Hi all --

The critical permits have been approved so construction is officially
underway. The permit approvals were one of the key risk factors in this
project, so things are moving well and are on schedule.

Just a few reminders:

1. Make sure to remove all your personal items from the lab. ALL of
them. Remove them from bins, from WIP racks, from shared storage. If
someone you know isn't aware of this, please make sure they are informed
-- we will be losing about 1/3 of the bins in the lab to make way for
new equipment and stockroom supplies, so we will be revamping the lab
bin process. To start fresh, everyone will need to clear out all the
bins -- and rollarounds, and shelves, etc. Any personal items left in
the lab will be removed by Staff. We will store the items but please
understand we can't be responsible for possible loss or damage.

2. The last day the lab is open is Wednesday, 12/14/11. Because we
have to make the lab safe for construction, many tools will be brought
down before this date, as toxic gas lines need to be purged, wet bench
drains need to be flushed, all small tools will be removed from the
lab. A schedule for individual tool shutdowns has been posted to the
SNF website -- but be aware that dates may change as we get nearer to
the time. Please refer to the schedule, but check on Coral for details.

Finally, thank you for your patience -- we realize this renovation is
inconvenient for you all -- meaning your help and cooperation are that
much more appreciated --

Thanks again -

Your SNF Staff

Bake Sale update

2011-12-07T15:54:00.001-08:00

Dear All,

I want to say a huge thank you for everyone who bought goodies at the
bake sale or made a donation. We made a staggering $365...Wohoooo!

All the proceeds will be going directly to Insight World Aid.

insightworldaid.org

I have cc'ed Nancy Smee who is one of the Board of Directors volunteering
for Insight, if you have any questions or interested to get involved.

Thank you all once again for your support and making this possible :)

Wish you all a Happy Holidays and a great start to the New year.

Jasmine

Bake Sale Continues AT 12:15 - 1:00P in the Break Room of the Allen Building

2011-12-07T10:07:00.001-08:00

Dear All,

Thank you so much for all your support with the Bake Sale yesterday. We still have some GREAT bake items left. We will be selling them today from 12:15 – 1:00P in the Break Room of the Allen Building.

Please stop by and see what we have left. All cookies will be $1.00 per packet.

Sincerely,

Maureen

Comment stsetch2 SNF 2011-12-06 15:10:41: Update

2011-12-06T15:10:00.001-08:00

RF generator needs to be replace. We are currently installing the spare generator. We will test it tomorrow.

Venture Clinic, Fri, 12/9, 2:30 pm, Allen 201 (Note room!)

2011-12-06T11:09:00.001-08:00

Dear labmembers -

With the lab shutdown, it may be a good time to give some thought
to.... starting your own company! If you are interested in learning
about the whole mysterious business of venture capital, Gavin McCraley
(Morrison & Foerster) and Shahin Farschi (Lux Capital) will be hosting a
clinic to answer your questions.

The Venture Clinic will be Friday, Dec. 9, starting at 2:30 pm in Allen
201 (note the room change.)

Contact info for our guest hosts:

Shahin Farshchi, Ph.D.
http://www.luxcapital.com
C: 925.323.2784

and

Gavin McCraley
Morrison& Foerster LLP
Direct: 650-813-4105
gmccraley@mofo.com

Re: vendors for ITO film coating

2011-12-06T10:56:00.000-08:00

Hi
http://www.advancedfilmservices.com/

Here is the web site for advanced film Services....they do a good job

Kathy

From: "KONG DESHENG" <desheng@stanford.edu>
To: labmembers@snf.stanford.edu
Sent: Monday, December 5, 2011 11:17:29 PM
Subject: vendors for ITO film coating

Hi All,

I am looking for a vendor to do ITO film coating on customer-supplied substrates.
We'll use the film as transparent conductors.

If you know some companies that provide these services, could you let me know about it?

Thank you in advance,
--
Desheng Kong

Member of Prof. Yi Cui's Group,
PhD Candidate,
Department of Materials Science and Engineering,
Stanford University

BAKE SALE AT 10:00A in Office 145 (Nancy Latta's Office ) in the Allen Building

2011-12-06T10:16:00.000-08:00

Come one, come all to our Bake Sale. It starts at 10:00A and will go until 1:00P. Please come buy something for your coffee break or your Lunch or for your family or

All OF THE ABOVE!!!!!!!!!!!!!

It is for a great cause – Insight World Aid – insightworldaid.org

Maureen

Labmember Lost Keys on Saturday

2011-12-06T09:44:00.001-08:00

Dear All,

One of SNF’s Lab members lost her keys on Saturday. This set of keys has a pink and green rubberized turtle attach to them. If you find them please drop them off with me. I am in cubicle #41 on the first floor of the Allen Building.

Thank you,

Maureen

Re: vendors for ITO film coating

2011-12-06T09:13:00.000-08:00

Try Advanced Film. These companies charge by the lot, so make sure you have enough samples.

On Monday, December 5, 2011, KONG DESHENG <desheng@stanford.edu> wrote:
> Hi All,
>
> I am looking for a vendor to do ITO film coating on customer-supplied substrates.
> We'll use the film as transparent conductors.
>
> If you know some companies that provide these services, could you let me know about it?
>
>
> Thank you in advance,
> --
> Desheng Kong
>
> Member of Prof. Yi Cui's Group,
> PhD Candidate,
> Department of Materials Science and Engineering,
> Stanford University
>
>

vendors for ITO film coating

2011-12-05T23:17:00.000-08:00

Hi All,

I am looking for a vendor to do ITO film coating on customer-supplied substrates.
We'll use the film as transparent conductors.

If you know some companies that provide these services, could you let me know about it?

Thank you in advance,
--
Desheng Kong

Member of Prof. Yi Cui's Group,
PhD Candidate,
Department of Materials Science and Engineering,
Stanford University

Re: Don't Forget the Bake Sale tomorrow from 8:00 to 1:00

2011-12-05T17:01:00.001-08:00

correction..It will start at 10am.

Thanks Maureen for sending this out as a reminder.

On Mon, 5 Dec 2011, Maureen Baran wrote:

> Dear All,
>
>
>
> Please don't forget the bake sale tomorrow in Nancy Latta's office, #145 on
> the first floor of the Allen Building. It will run from 8:00A to 1:00P.
> It's for a good cause.
>
>
>
> Thank you,
>
>
>
> Maureen
>
>

Don't Forget the Bake Sale tomorrow from 8:00 to 1:00

2011-12-05T16:36:00.001-08:00

Dear All,

Please don’t forget the bake sale tomorrow in Nancy Latta’s office, #145 on the first floor of the Allen Building. It will run from 8:00A to 1:00P. It’s for a good cause.

Thank you,

Maureen

found a cell phone

2011-12-05T11:16:00.001-08:00

Hello

Found a Nokia phone on the couch out side of my office, come and claim it.

mahnaz

Shutdown stsetch2 SNF 2011-12-05 10:47:40: RF generator repeatedly faulting

2011-12-05T10:47:00.001-08:00

Elmer tried to reset in the basement, but it tripped again on the first try.

Fwd: Imina Technologies miBots Nanomanipulation Workshop

2011-12-05T10:14:00.001-08:00

Starting now...

-------- Original Message --------

Subject:	Imina Technologies miBots Nanomanipulation Workshop
Date:	Wed, 16 Nov 2011 10:39:39 -0800
From:	Ed Myers <edmyers@stanford.edu>
To:	labmembers@snf.stanford.edu
CC:	tomlevesque424@gmail.com, dankleinen@aol.com

The SNF Staff in conjunction with Imina Technologies is pleased to present: NANOMANIPULATION WORKSHOP Monday December 5, 2011 The miBots™ are coming! Do you have a need for manipulation or sensing small samples in a microscope? If so, we invite you to see these novel nanopositioners for yourself at the Stanford NanoFabrication Facility in a FREE, hands-on workshop on December 5th in the Paul Allen Building, Auditorium Room 101X. Designed especially for light microscopy, SEMs and FIBs, these affordable, easy-to-use mini robots are virtually untethered and free to move independently, opening new vistas for manipulation and testing at the macro, micro, or nanoscale. Working individually or in groups, the miBot™ uses a variety of tools such as grippers, probes, and optical fibers so that, in addition to manipulating the sample, they can illuminate a nano workspace and conduct force or electrical measurements. Robust, mechanically and thermally stable, and vacuum-ready, these tiny trojans are a great, customizable solution for maneuvering and testing cells, nanostructures, semiconductor devices, LEDs, and MEMs. miBots will be working in the Paul Allen Building, Auditorium Room 101X from 10 AM till Noon. For more information, or to register for workshop, click here http://imina.ch/events/registration-form-workshops-california-december-2011. Imina will contact you in the week before the workshop to confirm and provide a map and directions. Want to learn more? Visit us at www.imina.ch or give Tom Levesque a call at (972) 318-0196. Regards, SNF Staff

Re: Problem stsetch2 SNF 2011-12-05 02:14:32: program crashed, need password to log in

2011-12-05T09:07:00.001-08:00

Restarted the program.

Problem stsetch2 SNF 2011-12-05 02:14:32: program crashed, need password to log in

2011-12-05T02:14:00.001-08:00

computer program had an error regarding setup file and exited. Need password to relog in.

New vacuum sealer

2011-12-02T14:31:00.001-08:00

Hi all,

SNF has purchased a new vacuum sealer in hope of eliminating some of
the pain of bagging all the wafer boxes and masks.

The new tool is on the table close to EPI for now, this will be
temporary.

I wrote a quick instruction and is taped to the table, add to it if I
have missed anything.

The bags are in a blue tray and bigger so two box of wafers can be
sealed easily. please note that bags are special order and should not
be used for other things.

mahnaz

Party delayed to 1:30

2011-12-02T12:57:00.001-08:00

Hello all,

Party will start at 1:30 due to delay on refreshment delivery.

mahnaz

HF vapor etchers, clean and gold contaminated

2011-12-02T04:18:00.001-08:00

They will be drained, rinsed and turned off for the shutdown on MON morning 12/12.

The last day to use them will be SUN night, 12/11.

Please plan accordingly.

Thanks - Gary